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K2225 Datasheet 2sk2225

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK2225 Silicon N-Channel MOS FET Application High speed power.

Key Features

  • High breakdown voltage (VDSS = 1500 V).
  • High speed switching.
  • Low drive current.
  • No Secondary Breakdown.
  • Suitable for Switching regulator, DC-DC converter Outline TO-3PFM ADE-208-140 1st. Edition D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2225 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel tempera.

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