Download K2590 Datasheet PDF
Hitachi Semiconductor
K2590
K2590 is Silicon N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features - Low on-resistance - High speed switching - Low drive current - No Secondary Breakdown - Suitable for Switching regulator, DC-DC converter, Motor Control Outline TO-220AB Preliminary D 123 1. Gate G 2. Drain (Flange) 3. Source 2SK2590 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I - 1 D(pulse) I DR Pch- 2 Tch Tstg Ratings 200 ±20 7 28 7 50 150 - 55 to +150 Unit V V A A A W °C °C 2SK2590 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance - -...
K2590 reference image

Representative K2590 image (package may vary by manufacturer)