K2590
K2590 is Silicon N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance
- High speed switching
- Low drive current
- No Secondary Breakdown
- Suitable for Switching regulator, DC-DC converter, Motor Control
Outline
TO-220AB
Preliminary
D 123 1. Gate
G 2. Drain (Flange)
3. Source
2SK2590
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
Symbol VDSS VGSS ID I
- 1
D(pulse)
I DR Pch- 2 Tch Tstg
Ratings 200 ±20 7 28 7 50 150
- 55 to +150
Unit V V A A A W °C °C
2SK2590
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
Gate to source breakdown voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on) resistance
- -...
Representative K2590 image (package may vary by manufacturer)