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K2885 - 2SK2885

Key Features

  • Low on-resistance RDS(on) = 10mΩ typ.
  • 4V gate drive devices.
  • High speed switching Outline LDPAK D G S ADE-208-545 A 2nd. Edition 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K2800 2SK2800

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK D G S ADE-208-545 A 2nd. Edition 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.