K2885 Datasheet | Hitachi Semiconductor

Features - Low on-resistance RDS(on) = 10mΩ typ. - 4V gate drive devices. - High speed switching Outline LDPAK ADE-208-545 A 2nd. Edition 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I - 1 D(pulse) I DR Pch- 2 Tch Tstg Ratings 30 ±20 45 180 45 75 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current I DSS Gate to source leak current IGSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance RDS(on) Forward transfer admittance...