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K2959 - Silicon N Channel MOS FET

Key Features

  • Low on-resistance RDS(on) = 7mΩ typ.
  • 4V gate drive devices.
  • High speed switching Outline TO.
  • 220AB D G S ADE-208-569C (Z) 4th. Edition Aug 1998 1 2 3 1. Gate 2. Drain(Flange 3. Source 2SK2959 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Note2 Channel temperature Tch St.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K2958 2SK2958
K2926 2SK2926
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K2930 2SK2930
K2936 2SK2936

Full PDF Text Transcription (Reference)

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2SK2959 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220AB D G S ADE-208-569C (Z) 4th. Edition Aug 1998 1 2 3 1. Gate 2. Drain(Flange 3. Source 2SK2959 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.