4V gate drive device can be driven from 5V source
Outline
TO.
220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3
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2SK3209
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Stora.
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2SK3209
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features
• Low on-resistance R DS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3
Free Datasheet http://www.Datasheet-PDF.com/
2SK3209
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 150 ±20 25 100 25 25 46 35 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR
Pch Tch
Tstg
1.
K3209 Datasheet
