K3209 Overview
2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st.
K3209 Key Features
- Low on-resistance R DS =35mΩ typ
- High speed switching
- 4V gate drive device can be driven from 5V source
K3209 datasheet by Hitachi Semiconductor (now Renesas).
| Part number | K3209 |
|---|---|
| Datasheet | K3209-HitachiSemiconductor.pdf |
| File Size | 41.24 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | 2SK3209 |
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2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st.
View all Hitachi Semiconductor (now Renesas) datasheets
| Part Number | Description |
|---|---|
| K320 | 2SK320 |
| K3228 | 2SK3228 |