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K439 - 2SK439

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Part number K439
Manufacturer Hitachi Semiconductor
File Size 23.22 KB
Description 2SK439
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    2SK439 Silicon N-Channel MOS FET Application VHF amplifier Outline SPAK 1 23 1. Gate 2. Source 3. Drain 2SK439 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VDS VGSS ID IG Pch Tch Tstg Ratings 20 ±5 30 ±1 300 150 –55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Power gain Noise figure Note: Grade I DSS D 4 to 8 E 6 to 10 Symbol V(BR)DSX I GSS I DSS* 1 Min 20 — 4 0 8 — — — — — F 8 to 12 Typ — — — — 14 2.5 0.03 1.8 30 2.
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