PM45502C Datasheet | Hitachi Semiconductor

Features - - - - - - - - Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain Isolated base from Terminal Suitable for motor driver, switching regulator and etc. Data Sheet 4 U . .. Outline LF-C D2 S2 D1 S1 G1 S1 S2 No S1 D1 S2 D2 G1 S1 G2 S2 G2 Terminals M5 screw M5 screw M5 screw M5 screw #110 #110 #110 #110 Remarks Power terminal Rg G2 S2 S2 D1 Rg G1 S1 S1 Equivalent Circuit D2 Electrode Source 1 Drain 1 Source 2 Drain 2 Gate 1 Source 1 Gate 2 Source 2 Signal terminals Absolute Maximum Ratings (Ta = 25°C) (Per FET chip) Item Drain source voltage Gate source voltage Drain current Drain peak current Body to drain diode reverse drain current Body to drain diode reverse drain peak current Channel dissipation Channel temperature Storage temperature Insulation dielectric Notes 1. Value at Tc = 25°C 2. Base to terminals AC minute Symbol VDSS VGSS ID ID(peak) IDR IDR(peak) Pch- Tch Tstg Visol- 2 1 Rating 450 ±20 50 100 50 100 300 150 - 45 to +125 2000 Unit V V A A A A W °C °C V Data Sheet 4 U . .. Electrical Characteristics (Ta = 25°C) (Per FET chip) Item Drain to source breakdown voltage Gate to source leak current Gate to source breakdown voltage Symbol V(BR)DSS IGSS V(BR)GSS Min 450 - ±20 - 1.5 - - 25 - - - - - - - - - Typ - - - - - 2.0 0.08 40 10250 3600 400 150 700 800 600 1.2 200 Max - ±50 - 1 4.0 3.0 0.12 - - - - - - - - - - Unit V µA V m A V V Ω S p F p F p F ns ns ns ns V ns IF = 25 A, VGS = 0 IF = 25 A, VGS = 0 di F/dt = 100 A/µs ID = 25 A, VGS = 10 V RL = 1.2 Ω Test conditions ID = 10 m A, VGS = 0 VGS = ±16 V, VDS = 0 IG = ±100 µA, VDS = 0 VDS = 360 V, VGS = 0 ID = 1 m A, VDS = 10 V ID = 25 A, VGS = 10 V- ID = 25 A, VGS = 10 V- ID = 25 A, VDS = 10 V- VDS = 10 V, VGS = 0 f = 1...