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TBB1004 - Twin Build in Biasing Circuit MOS FET IC

Key Features

  • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; CMPAK-6 Outline CMPAK-6 www. DataSheet. co. kr 6 5 4 2 1 3 1. Drain(1) 2. Source 3. Gate-1(1) 4. Gate-1(2) 5. Gate-2 6. Drain(2) Not.

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TBB1004 Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-988H (Z) 9th. Edition Dec. 2000 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-6 Outline CMPAK-6 www.DataSheet.co.kr 6 5 4 2 1 3 1. Drain(1) 2. Source 3. Gate-1(1) 4. Gate-1(2) 5. Gate-2 6. Drain(2) Notes: 1. 2. Marking is “DM”. TBB1004 is individual type number of HITACHI TWIN BBFET. Datasheet pdf - http://www.DataSheet4U.