Hitachi 1SS108
Silicon Schottky Barrier Diode
| Part No. | 1SS108 |
|---|---|
| Datasheet | 1SS108 Download |
| Manufacturer |  Hitachi |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● Detection efficiency is very good.● Small temperature coefficient.
● High reliability with glass seal. Ordering Information Type No. 1SS108 Cathode White 2nd band Black Mark H Package Code DO-35 Outline H 1 2nd band Cathode band 2 1. Cathode 2. Anode 1SS108
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 30 15 125 –55 to +125 Unit V mA °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability Symbol IF IR C η — Min 3.0 — — 70 70 Typ — — — — — Max — 100 3.0 — — Unit mA µA pF % V Test Condition VF = 1V VR = 10V VR = 1V, f = 1MHz Vin = 2Vrms, f = 40MHz, RL = 5k Ω, CL = 20pF *C = 200pF, Both forward and reverse direction 1 pulse. Note: Failure criterion; I R ≥ 200µA at VR = 10V 10 –1 Forward current I F (A) 10 –2 10 –3 10 –4 10 –5 10 –6 0 1.2 1.6 0.4 0.8 Forward voltage VF (V) 2.0 Fig.1 Forward current Vs.
