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1SS110 Datasheet PDF

Hitachi 1SS110

Silicon Diode

Part No. 1SS110
Datasheet 1SS110 Download
Manufacturer
Hitachi
Description Silicon Diode
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1SS110 datasheet page 1 preview

FEATURES

● Low forward resistance. (r f = 0.9 Ω max)
● Suitable for 5mm pitch high speed automatical insertion.
● Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS110 Cathode band Verdure Package Code MHD Outline 1 Cathode band 2 1. Cathode 2. Anode 1SS110

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Reverse voltage Forward current Junction temperature Storage temperature Symbol VR IF Tj Tstg Value 35 100 175 –65 to +175 Unit V mA °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Forward voltage Reverse voltage Reverse current Capacitance Forward resistance Symbol VF VR IR C rf Min — 35 — — — Typ — — — — — Max 1.0 — 0.1 1.2 0.9 Unit V V µA pF Ω Test Condition I F = 10mA I R = 10µA VR = 25V VR = 6V, f = 1MHz I F = 2mA, f = 100MHz 1SS110 10 –2 10 Forward current I F (A) –4 10–6 10 –8 10 –10 10 –12 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 10 f = 1MHz Capacitance C (pF) 1.0 10 –1 1.0 10 Reverse voltage VR (V) 40 Fig.2 Capacitance Vs.
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