Hitachi 1SS165
Silicon Schottky Barrier Diode
| Part No. | 1SS165 |
|---|---|
| Datasheet | 1SS165 Download |
| Manufacturer |  Hitachi |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● Low capacitance. (C = 1.0pF max)● Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS165 Cathode band Green Package Code MHD ADE-208-397 (Z) Rev. 0 Oct. 1995 Outline 1 2 Cathode band 1. Cathode 2. Anode
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Average forward current Peak forward current Power dissipation Junction temperature Storage temperature Symbol VR IO IFM Pd Tj Tstg Value 10 15 35 150 100 –55 to +100 Unit V mA mA mW °C °C 1SS165ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Max Forward voltage Reverse current Capacitance VF1 365 — 430 VF2 520 — 600 IR1 — — 0.2 IR2 — — 10 C — — 1.0 Capacitance deviation ∆C — — 0.1 Forward voltage deviation ESD-Capability ∆VF1 — — 10 ∆VF2 — — 10 — 30 — — Notes: 1. Failure criterion; IR ≥ 50µA 2. Each group shall unify a multiple of 4 diodes Unit mV µA pF pF mV V Test Condition IF = 1mA IF = 10mA VR = 2V VR = 10V VR = 0V, f = 1MHz VR = 0V, f = 1MHz IF = 2.5mA IF = 10mA *1C = 200pF, Both forward and reverse direction 1 pulse.
