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2SA1029 Datasheet PDF

Hitachi 2SA1029

The 2SA1029 and 2SA1030 are grouped by h FE as follows.
Part No. 2SA1029
Datasheet 2SA1029 Download
Manufacturer
Hitachi
Description Silicon PNP Epitaxial Transistor
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2SA1029 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1029 –30 –30 –5 –100 100 300 150 –55 to +150 2SA1030 –55 –50 –5 –100 100 300 150 –55 to +150 Unit V V V mA mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) 2SA1029 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 2SA1030 Max — — — –0.5 –0.5 500 –0.8 –0.2 — 4.0 Min –55 –50 –5 — — 100 — — 200 — Typ — — — — — — — — 280 3.3 Max — — — –0.5 –0.5 320 –0.8 –0.2 — 4.0 V V MHz pF Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA VCE = –1...
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