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2SA1081 Datasheet PDF

Hitachi 2SA1081

The 2SA1025, 2SA1081 and 2SA1082 are grouped by h FE as follows.
Part No. 2SA1081
Datasheet 2SA1081 Download
Manufacturer
Hitachi
Description Silicon PNP Epitaxial Transistor
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2SA1081 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1025 –60 –60 –5 –100 100 400 150 –55 to +150 2SA1081 –90 –90 –5 –100 100 400 150 –55 to +150 2SA1082 –120 –120 –5 –100 100 400 150 –55 to +150 Unit V V V mA mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) 2SA1025 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Symbol Min V(BR)CBO –60 V(BR)CEO –60 V(BR)EBO –5 ICBO IEBO 1 2SA1081 Max — — — –0.1 –0.1 800 –0.2 Min –90 –90 –5 — — 250 — — — — Typ Max — — — — — — — — — — –0.1 –0.1 800 –0.2 2SA1082 Min Typ Max — — — –0.1 –0.1 800 –0.2 V V Unit Test conditions V V µA µA IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –50 V, I E = 0 VEB = –2 V, IC = 0...
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