Datasheet4U.com

2SA1188 Datasheet PDF

Hitachi 2SA1188

The 2SA1188 and 2SA1189 are grouped by h FE as follows.
Part No. 2SA1188
Datasheet 2SA1188 Download
Manufacturer
Hitachi
Description Silicon PNP Epitaxial Transistor
Buy Stock & Price
2SA1188 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1188 –90 –90 –5 –100 100 400 150 –55 to +150 2SA1189 –120 –120 –5 –100 100 400 150 –55 to +150 Unit V V V mA mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) 2SA1188 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 2SA1189 Max — — — –0.1 –0.1 800 Min Typ Max — — — –0.1 –0.1 800 Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –70 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA*2 I C = –10 mA, I B = –1 mA...
2SA1188 page 2 preview 2SA1188 page 3 preview