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2SA1190 Datasheet PDF

Hitachi 2SA1190

The 2SA1190 and 2SA1191 are grouped by h FE as follows.
Part No. 2SA1190
Datasheet 2SA1190 Download
Manufacturer
Hitachi
Description Silicon PNP Epitaxial Transistor
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2SA1190 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1190 –90 –90 –5 –100 100 400 150 –55 to +150 2SA1191 –120 –120 –5 –100 100 400 150 –55 to +150 Unit V V V mA mA mW °C °C 2 2SA1190, 2SA1191

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) 2SA1190 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 2SA1191 Max — — — –0.1 –0.1 800 Min Typ Max — — — –0.1 –0.1 800 Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –70 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA*2 I C =...
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