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2SA1193K Datasheet PDF

Hitachi 2SA1193K

Silicon PNP Epitaxial Transistor

Part No. 2SA1193K
Datasheet 2SA1193K Download
Manufacturer
Hitachi
Description Silicon PNP Epitaxial Transistor
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2SA1193K datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –60 –60 –7 –0.5 –1.0 0.9 150 –55 to +150 Unit V V V A A W °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Symbol Min –60 — — 2000 — — — — Typ — — — — — — 0.3 0.9 Max — –1.0 –1.0 — –1.5 –2.0 — — V V µs µs I C = –250 mA I B1 = –IB2 = –0.5 mA Unit V µA µA Test conditions I C = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IC = 0 VCE = –3 V, IC = –250 mA*1 I C = –250 mA, IB = –0.5 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test I CBO I EBO hFE VCE(sat) VBE(sat) t on t off 2 2SA1193(K) Maximum Collector Dissipat...
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