Hitachi 2SA1194K
Silicon PNP Epitaxial Transistor
| Part No. | 2SA1194K |
|---|---|
| Datasheet | 2SA1194K Download |
| Manufacturer |  Hitachi |
| Description | Silicon PNP Epitaxial Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C Tj Tstg 1 Rating –60 –60 –7 –1 –2 1 8 150 –55 to +150 Unit V V V A A W W °C °C 2SA1194(K)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min –60 — — 1000 — — — — Typ — — — — — — 0.7 0.8 Max — –1.0 –1.0 — –2.0 –2.0 — — V V µs µs I C = –500 mA I B1 = –IB2 = –1 mA Unit V µA µA Test conditions I C = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IC = 0 VCE = –3 V, IC = –500 mA*1 I C = –500 mA, IB = –1 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test I CBO I EBO hFE VCE(sat) VBE(sat) t on t off...
