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2SA1374 Datasheet PDF

Hitachi 2SA1374

The 2SA1374 is grouped by hFE as follows.
Part No. 2SA1374
Datasheet 2SA1374 Download
Manufacturer
Hitachi
Description Silicon PNP Epitaxial Transistor
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2SA1374 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –55 –55 –5 –100 –30 300 150 –55 to +150 Unit V V V mA mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –55 –55 –5 — — 1 Typ — — — — — — –0.66 –0.1 250 2.5 Max — — — –0.1 –0.05 500 –0.75 –0.5 — — Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IE = 0 VCE = –12 V, IC = –2 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: C 160 to 320 D 250 to 500 V(BR)EBO I...
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