Datasheet4U.com

2SA1390 Datasheet PDF

Hitachi 2SA1390

The 2SA1390 is grouped by hFE1 as follows.
Part No. 2SA1390
Datasheet 2SA1390 Download
Manufacturer
Hitachi
Description Silicon PNP Epitaxial Transistor
Buy Stock & Price
2SA1390 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –35 –35 –4 –500 300 150 –55 to +150 Unit V V V mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –35 –35 –4 — — 60 10 — Typ — — — — –0.2 — — –0.64 Max — — — –0.5 –0.6 320 — — V Unit V V V µA V Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –20 V, IE = 0 I C = –150 mA, IB = –15 mA*2 VCE = –3 V, IC = –10 mA VCE = –3 V, IC = –500 mA*2 VCE = –3 V, IC = –10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio DC current transfer ratio Base to emitter voltage V(BR)EBO I CBO VCE(sat) hFE1* 1 hFE2 VBE Notes: 1. The 2SA1390 is grouped by hFE1 as follows.
2SA1390 page 2 preview 2SA1390 page 3 preview