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2SA1468 Datasheet PDF

Hitachi 2SA1468

The 2SA1468 is grouped by h FE as follows.
Part No. 2SA1468
Datasheet 2SA1468 Download
Manufacturer
Hitachi
Description Silicon PNP Transistor
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2SA1468 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –180 –180 –5 –100 150 150 –55 to +150 Unit V V V mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –180 –180 –5 100 — — — — Typ — — — — — — 200 3.5 Max — — — 320 –0.5 –1.0 — — V V MHz pF Unit V V V Test conditions I C = –10 µA, IE = 0 I C = –0.5 mA, RBE = ∞ I E = –10 µA, IC = 0 VCE = –12 V, IC = –2 mA*2 I C = –30 mA, IB = –3 mA*2 VCE = –12 V, IC = –2 mA VCE = –12 V, IC = –10 mA VCB = –10 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance V(BR)EBO hFE*1 VCE(sat) VBE fT Cob Notes: 1. The 2SA1468 is grouped by h FE as follows.
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