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2SA1617 Datasheet PDF

Hitachi 2SA1617

The 2SA1617 is grouped by hFE as follows.
Part No. 2SA1617
Datasheet 2SA1617 Download
Manufacturer
Hitachi
Description Silicon PNP Epitaxial Transistor
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2SA1617 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –55 –50 –5 –100 150 150 –55 to +150 Unit V V V mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –55 –50 –5 — — 1 Typ — — — — — — — — Max — — — –0.5 –0.5 320 –0.2 –0.8 Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –30 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Note: Grade Mark hFE B VIB 100 to 200 C VIC 160 to 320 V(BR)EBO I CBO I EBO hFE* 100 — — VCE(sat) VBE V V I C = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA 1.
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