Hitachi 2SA1960
Silicon NPN Epitaxial Planar Transistor
| Part No. | 2SA1960 |
|---|---|
| Datasheet | 2SA1960 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● High voltage large current operation. VCEO = –80 V, IC = –300 mA● High fT . fT = 1.3 GHz
● Small output capacitance. Cob = 2.9 pF 2SA1960 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –80 –80 –3 –300 625 150 –55 to +150 Unit V V V mA mW °C °C 2 2SA1960ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector to base cutoff current Emitter to base cutoff current DC current transfer ratio Gain bandwidth product Emitter input capacitance Collector output capacitance Symbol V(BR)CBO V(BR)CEO I CBO I EBO hFE fT Cib Cob Min –80 –80 — — 20 1.1 — — Typ — — — — 60 1.3 14.5 2.9 Max — — –1.0 –10 — — 18 4.0 GHz pF pF Unit V V µA µA Test conditions I C = –100...
