ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA673 –35 –35 –4 –500 400 150 –55 to +150 2SA673A –50 –50 –4 –500 400 150 –55 to +150 Unit V V V mA mW °C °C ELECTRICAL CHARACTERISTICS
(Ta = 25°C) 2SA673 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current trnsfer ratio DC current trnsfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VCE(sat) hFE*1 hFE Min –35 –35 –4 — — 60 10 — Typ — — — — –0.2 — — Max — — — –0.5 –0.6 320 — 2SA673A Min –50 –50 –4 — — 60 10 — Typ — — — — –0.2 — — Max — — — –0.5 –0.6 320 — V Unit V V V µA V Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –20 V, IE = 0 I C = –150 mA, I B = –15 mA*2 VCE = –3 V, I C = –10 mA VCE = –3 V, I C = –500 mA*2 VCE = –3 V, I C =–10 mA Base to emitter voltage VBE –0.64 — –0.64 — Notes: 1.
Hitachi
