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2SA673A Datasheet PDF

Hitachi 2SA673A

The 2SA673A(K) is grouped by hFE as follows.
Part No. 2SA673A
Datasheet 2SA673A Download
Manufacturer
Hitachi
Description Silicon PNP Epitaxial Transistor
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2SA673A datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –50 –50 –4 –0.5 0.4 150 –55 to +150 Unit V V V A W °C °C 2 2SA673A(K)

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –50 –50 –4 — — — — — 60 10 — — — — Typ — — — — — –0.64 –0.2 –0.87 — — 120 0.3 0.6 0.4 Max — — — –0.5 –0.5 — –0.6 — 320 — — — — — MHz µs µs µs Unit V V V µA µA V V V Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –20 V, IE = 0 VEB = –3 V, IC = 0 VEB = –3 V, IC = –10 mA I C = –150 mA, IB = –15 mA*2 I C = –150 mA, IB = –15 mA*2 VCE = –3 V, IC = –10 mA VCE = –3 V, IC = –500 mA*2 VCE = –3 V, IC = –10 mA VCC = –10.3 V I C = 10 IB1 = –10 IB2 = –10 mA VCC = –5 V, I C = IB1 = IB2 = –20 mA Collector to emitter breakdown V(BR)CEO voltage Emitter...
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