Hitachi 2SB1012
Silicon PNP Epitaxial Transistor
| Part No. | 2SB1012 |
|---|---|
| Datasheet | 2SB1012 Download |
| Manufacturer |  Hitachi |
| Description | Silicon PNP Epitaxial Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Rating –120 –120 –7 –1.5 –3.0 20 150 –55 to +150 1.5 Unit V V V A A W °C °C AELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min –120 –7 — — 2000 — — — — — — — Typ — — — — — — — — — — 0.5 2.0 Max — — –100 –10 30000 –1.5 –2.0 –2.0 –2.5 3.0 — — V V V V V µs µs Unit V V µA µA Test conditions I C = –10 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –120 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –1 A*1 I C = –1 A, IB = –1 mA*1 I C = –1.5 A, IB = –1.5 mA*1 I C = –1 A, IB = –1 mA*1 I C = –1.5 A, IB = –1.5 mA*1 I D = 1.5 A*1 I C = –1 A, IB1 = –IB2 = –1 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff...
