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2SB1048 Datasheet PDF

Hitachi 2SB1048

PNP Transistor

Part No. 2SB1048
Datasheet 2SB1048 Download
Manufacturer
Hitachi
Description PNP Transistor
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2SB1048 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings –60 –60 –7 –1 –2 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 × 30 × 0.7 mm)

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Notes: 1. Pulse test 2. Marking is “BT” Symbol V(BR)CBO V(BR)CEO I CBO I EBO hFE VCE(sat) VBE(sat) Min –60 –60 — — 2000 — — Typ — — — — — — — Max — — –10 –10 100000 –2.0 –2.0 V V Unit V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, I...
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