Hitachi 2SB1078K
Silicon PNP Transistor
| Part No. | 2SB1078K |
|---|---|
| Datasheet | 2SB1078K Download |
| Manufacturer |  Hitachi |
| Description | Silicon PNP Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC*1 Tj Tstg Rating Unit –120 V –120 V –7 V –8 A –12 A 40 W 150 °C –55 to +150 °C 2SB1078(K)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Collector to emitter breakdown V(BR)CEO –120 — voltage Emitter to base breakdown V(BR)EBO –7 — voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage ICBO ICEO hFE VCE(sat)1 — — — — 1000 — — — VCE(sat)2 — — Base to emitter saturation VBE(sat)1 — — voltage Turn on time Storage time Fall time Note: 1. Pulse test VBE(sat)2 — — ton — 1.5 tstg — 2.0 tf — 0.5 Max Unit — V — V –100 µA –10 µA 20000 –1.5 V –3.0 V –2.0 V –3.5 V — µs — µs — µs Test conditions IC = –25 mA, RBE = ∞ IE = –50 mA, IC = 0 VCB = –120 V, IE...
