Datasheet4U.com

2SB1391 Datasheet PDF

Hitachi 2SB1391

Silicon PNP Transistor

Part No. 2SB1391
Datasheet 2SB1391 Download
Manufacturer
Hitachi
Description Silicon PNP Transistor
Buy Stock & Price
2SB1391 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Ratings –120 –120 –7 –8 –12 2 25 150 –55 to +150 Unit V V V A A W °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –120 –120 –7 — — 1000 — — — — Typ — — — — — — — — — — Max — — — –10 –10 20000 –1.5 –3.0 –2.0 –3.5 V V Unit V V V µA Test conditions I C = –0.1 mA, IE = 0 I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –100 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –4 A*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1.
2SB1391 page 2 preview 2SB1391 page 3 preview