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2SB1409 Datasheet PDF

Hitachi 2SB1409

The 2SB1409(L)/(S) is grouped by h FE1 as follows.
Part No. 2SB1409
Datasheet 2SB1409 Download
Manufacturer
Hitachi
Description Silicon PNP Epitaxial Transistor
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2SB1409 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings –180 –160 –5 –1.5 –3 18 150 –55 to +150 Unit V V V A A W °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –180 –160 –5 — 1 Typ — — — — — — — — 240 25 Max — — — –10 200 — –1 –1.5 — — Unit V V V µA Test conditions I C = –1 mA, IE = 0 I C = –10 mA, RBE = ∞ I E = –1 mA, IC = 0 VCB = –160 V, IE = 0 VCE = –5 V, IC = –150 mA*2 VCE = –5 V, IC = –500 mA*2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance V...
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