Hitachi 2SB727
Silicon PNP Transistor
| Part No. | 2SB727 |
|---|---|
| Datasheet | 2SB727 Download |
| Manufacturer |  Hitachi |
| Description | Silicon PNP Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Rating –120 –120 –7 –6 –10 40 150 –55 to +150 Unit V V V A A W °C °C 2SB727(K)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min –120 –7 — — 1000 — — — — — — Typ — — — — — — — — — 1.0 3.0 Max — — –100 –10 20000 –1.5 –3.0 –2.0 –3.5 — — V V V V µs µs Unit V V µA µA Test conditions I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –120 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –3 A*1 I C = –3 A, IB = –6 mA*1 I C = –6 A, IB = –60 mA*1 I C = –3 A, IB = –6 mA*1 I C = –6 A, IB = –60 mA*1 I C = –3 A, IB1 = –IB2 = –6 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1.
