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2SB738 Datasheet PDF

Hitachi 2SB738

The 2SB738 and 2SB739 are grouped by h FE as follows.
Part No. 2SB738
Datasheet 2SB738 Download
Manufacturer
Hitachi
Description Silicon PNP Epitaxial Transistor
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2SB738 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SB738 –20 –16 –6 –2 0.9 150 –55 to +150 2SB739 –20 –20 –6 –2 0.9 150 –55 to +150 Unit V V V A W °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) 2SB738 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 2SB739 Max Min — — — –2 –20 –20 –6 — Typ — — — — — — — 150 50 Max Unit Test conditions — — — –2 V V V µA I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –16 V, IE = 0 VEB = –6 V, IC = 0 VCE = –2 V, IC = –0.1 A I C = –1 A, IB = –0.1 A Typ — — — — — — — 150 50 –20 –16 –6 — — 100...
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