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2SB857 Datasheet PDF

Hitachi 2SB857

The 2SB857 and 2SB858 are grouped by h FE1 as follows.
Part No. 2SB857
Datasheet 2SB857 Download
Manufacturer
Hitachi
Description Silicon PNP Transistor
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2SB857 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at T C = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 2SB857 –70 –50 –5 –4 –8 40 150 –45 to +150 2SB858 –70 –60 –5 –4 –8 40 150 –45 to +150 Unit V V V A A W °C °C 2SB857, 2SB858

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) 2SB857 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SB858 Max — — — –1 320 — –1 –1 — Min –70 –60 –5 — 60 35 — — — Typ — — — — — — — — 15 Max — — — –1 320 — –1 –1 — V V MHz Unit V V V µA Test conditions I C = –10 µA, IE = 0 I C = –50 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –50 V, IE = 0 VCE = –4 V I C = –1 A*2 I C = –0.1 A*2 Min –70 –50 –5 — 60 35 — — — Typ — — — — — — — — 15 DC cu...
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