Hitachi 2SC1342
The 2SC1342 is grouped by h FE as follows.| Part No. | 2SC1342 |
|---|---|
| Datasheet | 2SC1342 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN epitaxial planar type Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 30 100 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 20 4 — 1 Typ — — — — — 0.8 1.1 20 320 5.5 0.9 17 Max — — — 0.5 200 1.2 1.5 35 — 8.5 1.2 — Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 6 V, IC = 1 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Collector output capacitance Base time constant Gain bandwidth product Noise figure Reverse transfer capacitance Power gain V(BR)EBO I CBO hFE* 35 — — — 150 — — 13 VCE(sat) Cob rbb’●CC fT NF Cre PG...
