Hitachi 2SC1515
Silicon NPN Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature VEBO IC PC Tj Tstg Ratings 200 200 150 5 50 200 150 –55 to +150 Unit V V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 200 150 5 — 30 — — 60 — Typ — — — — — — — — — Max — — — 0.1 300 1.0 1.5 — 10 V V MHz pF Unit V V V µA Test conditions I C = 10 µA, RBE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 6 V, IC = 10 mA I C = 10 mA, IB = 1 mA I C = 10 mA, IB = 1 mA VCE = 6 V, IC = 10 mA VCB = 6 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CES voltage V(BR)CEO Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CBO hFE VCE(sat) VBE(sat) fT...