Hitachi 2SC1775
The 2SC1775/A is grouped by hFE1 as follows.2SC1775 Specifications
- Max Collector Current : 50mA
- Terminals : 3
- Collector Emitter Voltage : 90V
- Collector Emitter Saturation Voltage : 500mV
- Max Power Dissipation : 300mW
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | 2SC1775 |
|---|---|
| Datasheet | 2SC1775 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC1775 90 90 5 50 300 150 –55 to +150 2SC1775A 120 120 5 50 300 150 –50 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) 2SC1775 Item Collector to emitter breakdown voltage Collector cutoff current Symbol Min V(BR)CEO I CBO 1 2SC1775A Max — 0.5 — Min 120 — — Typ — — — — — — — 200 1.6 — Max — — 0.5 1200 — 0.75 0.5 — — 5.0 V V MHz pF dB Unit V µA µA Test conditions I C = 1 mA, RBE = ∞ VCB = 75 V, IE = 0 VCB = 100 V, IE = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, I C = 0.1 mA VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 25 V, IE = 0, f = 1 MHz VCE = 6 V, I C = 50 µA, Rg = 50 kΩ f = 10 Hz f=1 kHz Typ — — — — — — — 200 1.6 — 90 — — DC current transfer ratio hFE1* hFE2 Base to emitter voltage VBE Collector to...
