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2SC2462 Datasheet PDF

Hitachi 2SC2462

The 2SC2462 is grouped by h FE as follows.
Part No. 2SC2462
Datasheet 2SC2462 Download
Manufacturer
Hitachi
Description Silicon NPN Transistor
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2SC2462 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 50 40 5 100 –100 150 150 –55 to +150 Unit V V V mA mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 50 40 5 — — 1 Typ — — — — — — — — Max — — — 0.5 0.5 500 0.2 0.75 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 30 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Note: Grade Mark hFE B LB 100 to 200 C LC 160 to 320 V(BR)EBO I CBO I EBO hFE* 100 — — D LD VCE(sat) VBE V V I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA 1.
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