Hitachi 2SC2732
Silicon NPN Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 25 4 20 150 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 25 4 — — 30 700 — — Typ — — — — — 60 1000 0.5 7.0 Max — — — 0.5 5 — — 0.8 — MHz pF dB Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IC = 0 I C = 10 mA, IB = 1 mA VCE = 10 V, IC = 3 mA VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 12 V, IC = 1 mA, f = 900 MHz, f OSC = 930 MHz (0dBm) , f out = 30 MHz VCC = 12 V, IC = 1 mA, f = 900 MHz, f OSC = 930 MHz (0dBm) , f out = 30 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltag...