Hitachi 2SC3338
Silicon NPN Epitaxial Transistor
| Part No. | 2SC3338 |
|---|---|
| Datasheet | 2SC3338 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Epitaxial Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 12 3 50 400 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is “AR”. Symbol V(BR)CBO V(BR)CEO I EBO I CBO hFE Cob fT PG NF Min 20 12 — — 30 — 3.5 — — Typ — — — — 90 1.0 4.5 8.2 2.0 Max — — 10 0.5 200 1.5 — — — pF GHz dB dB Unit V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ VEB = 3 V, IC = 0 VCB = 15 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz See characteristic curves of 2SC3127.
