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2SC3494 Datasheet PDF

Hitachi 2SC3494

The 2SC3494 is grouped by h FE as follows.
Part No. 2SC3494
Datasheet 2SC3494 Download
Manufacturer
Hitachi
Description Silicon NPN Epitaxial Planar Transistor
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2SC3494 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 30 5 100 300 150 –55 to +150 Unit V V V mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Collector output capacitance Noise figure Power gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* VBE VCE(sat) Cob NF PG 1 Min 30 30 5 — — 60 — — — — 26 13 Typ — — — — — — 0.63 0.6 1.8 5.0 29 17 Max — — — 0.5 0.5 200 0.75 1.1 3.5 — — — Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA V V pF d...
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