Hitachi 2SC3512
Silicon NPN Transistor
| Part No. | 2SC3512 |
|---|---|
| Datasheet | 2SC3512 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 11 2 50 600 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector to cutoff current Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO I CEO I EBO I CBO hFE Cob fT PG NF Min 15 — — — 50 — — — — Typ — — — — 120 1.2 6.0 10.5 1.6 Max — 1 1 1 250 1.6 — — — pF GHz dB dB Unit V µA µA µA Test conditions I C = 10 µA, IE = 0 VCE = 10 V, RBE = ∞ VEB = 1 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz 2 2SC3512 Maximum Collector Dissipatio...
