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2SC3513 Datasheet PDF

Hitachi 2SC3513

Silicon NPN Transistor

Part No. 2SC3513
Datasheet 2SC3513 Download
Manufacturer
Hitachi
Description Silicon NPN Transistor
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2SC3513 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 11 2 50 150 150 –55 to +150 Unit V V V mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is “IS–”. Symbol V(BR)CBO I CEO I EBO I CBO hFE Cob fT PG NF Min 15 — — — 50 — — — — Typ — — — — 120 1.0 6.0 10 1.6 Max — 1 1 1 250 1.5 — — — pF GHz dB dB Unit V µA µA µA Test conditions I C = 10 µA, IE = 0 VCE = 10 V, RBE = ∞ VEB = 1 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz 2 2SC3513 Typical O...
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