Hitachi 2SC3652
SILICON NPN EPITAXIAL TRANSISTOR
| Part No. | 2SC3652 |
|---|---|
| Datasheet | 2SC3652 Download |
| Manufacturer |  Hitachi |
| Description | SILICON NPN EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC PC*1 Tj Tstg Ratings 30 20 3.5 0.3 0.5 0.8 5 150 –55 to +150 Unit V V V A A W W °C °C 2SC3652ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Collector to emitter breakdown V(BR)CEO voltage 20 Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage ICBO IEBO hFE VBE VCE(sat) — — 40 — — Gain bandwidth product fT Collector output capacitance Cob — — Input capacitance Cib — Note: 1. Pulse test Typ — — — — — — 1.2 5 10 Max — Unit V Test conditions IC = 10 mA, RBE = _ 1 mA 1 mA 200 1.2 V 2.0 V VCB = 25 V, IE = 0 VEB = 3 V, IC = 0 VCE = 5 V, IC = 50 mA*1 VCE = 5 V, IC = 300 mA*1 IC = 300 mA, IB = 60 mA*1 — GHz VCE...
