Hitachi 2SC3836
Silicon NPN Transistor
| Part No. | 2SC3836 |
|---|---|
| Datasheet | 2SC3836 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 60 50 15 300 300 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Base to emitter voltage DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BE)EBO I CBO VBE hFE1 hFE2 Collector to emitter saturation voltage VCE(sat) Min 60 50 15 — — 800 500 — Typ — — — — — — — — Max — — — 1 0.75 2000 — 0.3 V Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 50 V, IE = 0 VCE = 6 V, IC = 1 mA VCE = 6 V, IC = 100 mA (pulse test) VCE = 6 V, IC = 1 mA I C = 300 mA, IB = 30 mA (pulse test) 2 2SC3836 Maximum Collector Dissipation Curve Collector P...
