Hitachi 2SC3867
Silicon NPN Epitaxial Transistor
| Part No. | 2SC3867 |
|---|---|
| Datasheet | 2SC3867 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Epitaxial Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 11 3 50 150 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Conversion gain Noise figure Note: Marking is “DI–” Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VCE(sat) hFE fT Cob CG NF Min 20 11 3 — — 45 2.5 — 10 — Typ — — — — — — 3.8 0.8 14 10 Max — — — 0.5 0.7 200 — 1.5 — 14 GHz pF dB dB Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 15 V, IE = 0 I C = 10 mA, IB = 5 mA VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 1...
