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2SC4196 Datasheet PDF

Hitachi 2SC4196

Silicon NPN Transistor

Part No. 2SC4196
Datasheet 2SC4196 Download
Manufacturer
Hitachi
Description Silicon NPN Transistor
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2SC4196 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 25 15 3 50 150 150 –55 to +150 Unit V V V mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Oscillating output voltage Note: Marking is “QI–”. I EBO VCE(sat) hFE Cob fT VOSC Min 25 — — — — 50 — 1.8 — Typ — — — — — — 0.7 2.4 200 Max — 0.3 10 1.0 0.3 180 1.0 — — pF GHz mV Unit V µA µA µA V Test conditions I C = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 15 V, RBE = ∞ VEB = 3 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 5 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1MHz VCE = 5 V, IC = 20 mA VCC = 5 V, IC = 5 mA, f = 930 MHz 2 2SC4196 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 DC Current Transfer Ratio hFE DC Current Transfer Ratio vs.
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