Hitachi 2SC4264
Silicon NPN Transistor
| Part No. | 2SC4264 |
|---|---|
| Datasheet | 2SC4264 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 11 3 50 100 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Note: Marking is “GC”. I EBO VCE(sat) hFE Cob fT Min 20 — — — — 20 — 1.4 Typ — — — — — — — — Max — 0.5 10 1.0 0.7 — 1.5 — pF GHz Unit V µA µA µA V Test conditions I C = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 11 V, RBE = ∞ VEB = 3 V, IC = 0 I C = 10 mA, IB = 5 mA VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1MHz VCE = 10 V, IC = 10 mA See characteristic curves of 2SC2734. 2 2SC4264 Maximum Collector Dissipation Curve...
