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2SC4366 Datasheet PDF

Hitachi 2SC4366

Silicon NPN Transistor

Part No. 2SC4366
Datasheet 2SC4366 Download
Manufacturer
Hitachi
Description Silicon NPN Transistor
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2SC4366 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 60 50 15 300 150 150 –55 to +150 Unit V V V mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Base to emitter voltage DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VBE hFE1 hFE2 Collector to emitter saturation voltage Note: Marking is “ZI–”. VCE(sat) Min 60 50 15 — — 800 500 — Typ — — — — — — — — Max — — — 1 0.75 2000 — 0.3 V Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 50 V, IE = 0 VCE = 6 V, IC = 1 mA VCE = 6 V, IC = 100 mA (pulse) VCE = 6 V, IC = 1 mA I C = 300 mA, IB = 30 mA (pulse) 2 2SC4366 Maximum Collector Dissipation Cur...
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