Hitachi 2SC4416
Silicon NPN Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 25 13 3 50 150 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Conversion gain I EBO VCE(sat) hFE Cob fT CG Min 25 — — — — 50 — 3.0 15 Typ — — — — — — 0.85 3.8 19 Max — 0.1 10 0.3 0.3 180 1.3 — — pF GHz dB Unit V µA µA µA V Test conditions I C = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCB = 13 V, RBE = ∞ VEB = 3 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 5 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCC = 5 V, IC = 0.8 mA, f in = 900 MHz, f OSC = 930 MHz (–5dBm), f out = 30 MHz Noise figure Note: Marking is “XB–”.