Hitachi 2SC4692
Silicon NPN Triple Diffused Planar Transistor
| Part No. | 2SC4692 |
|---|---|
| Datasheet | 2SC4692 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Triple Diffused Planar Transistor |
| Buy | Stock & Price |
FEATURES
● High speed switching 0.5 µs Max● High breakdown voltage VCBO = 1500 V
● Isolated package; TO-3PFM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC4692
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC (surge) PC* Tj Tstg 1 Ratings 1500 800 5 12 20 50 150 –55 to +150 Unit V V V A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 800 5 — 15 — — — Typ — — — — — — — Max — — 500 35 5 1.5 0.5 V V µs Unit V V µA Test conditions IC = 10 mA, RBE = _ IE = 10 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A IC = 10 A, IB = 2 A IC = 10 A, IB = 2 A ICP = 8 A, IB1 = 1.4 A, IB2 = –2.5 A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector...
