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2SC4692 - Silicon NPN Triple Diffused Planar Transistor

Key Features

  • High speed switching 0.5 µs Max.
  • High breakdown voltage VCBO = 1500 V.
  • Isolated package; TO-3PFM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC4692 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC (surge) PC.
  • Tj.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC4692 Silicon NPN Triple Diffused Application EDTV/HDTV horizontal deflection output Features • High speed switching 0.5 µs Max • High breakdown voltage VCBO = 1500 V • Isolated package; TO-3PFM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC4692 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC (surge) PC* Tj Tstg 1 Ratings 1500 800 5 12 20 50 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 800 5 — 15 — — — Typ — — — — — — — Max — — 500 35 5 1.5 0.