Hitachi 2SC4704
Silicon NPN Transistor
| Part No. | 2SC4704 |
|---|---|
| Datasheet | 2SC4704 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 200 V ————————————————————– Collector to emitter voltage VCEO 200 V ————————————————————– Emitter to base voltage VEBO 4 V ————————————————————– Collector current IC 0.2 A ————————————————————– Collector peak current iC(peak) 0.5 A ————————————————————– Collector power dissipation PC 1.25 W —————— PC*1 10 ————————————————————– Junction temperature Tj 150 °C ————————————————————– Storage temperature Tstg –55 to °C +150 ————————————————————– Note: 1. Value at TC = 25°C. 123 1. Emitter 2. Collector 3. BaseELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Max Unit Test condition ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 200 — — V IC = 10 µA, IE = 0 ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 200 — — V IC = 1 mA, RBE = ∞ ——————————————————————————————————————————— Emitter to...
